| PART |
Description |
Maker |
| JS28F256P30TFA |
Micron Parallel NOR Flash Embedded Memory (P30-65nm)
|
Micron Technology
|
| PC48F4400P0VB0EE PC48F4400P0VB0EF RC28F256P30BFE R |
256Mb and 512Mb (256Mb/256Mb), P30-65nm
256Mb and 512Mb (256Mb/256Mb), P30-65nm
|
Micron Technology
|
| CPP-P19-3S CPP-P30-3S |
CPP-P30/19-3S
|
Ferroxcube International Holding B.V.
|
| CPV-P30-1S-6PDL-Z CPV-P19-1S-6PDL-Z |
CPV-P30/19-1S-6PDL-Z
|
Ferroxcube International Holding B.V.
|
| JS28F256P30B95 PC28F256P30B85 PC28F256P30T85 TE28F |
Numonyx StrataFlash Embedded Memory
|
Numonyx B.V
|
| CS200 |
65nm CMOS Technology
|
Fujitsu Limited
|
| S29GL032N11TAIV13 2N11FAIV22 S29GL032N70BAI43 S29G |
64 Megabit, 32 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 110 nm MirrorBit Process Technology 2M X 16 FLASH 3V PROM, 110 ns, PDSO56
2M X 16 FLASH 3V PROM, 70 ns, PBGA48
2M X 16 FLASH 3V PROM, 70 ns, PBGA64
2M X 16 FLASH 3V PROM, 90 ns, PDSO48
4M X 16 FLASH 3V PROM, 70 ns, PBGA48
4M X 16 FLASH 3V PROM, 90 ns, PBGA48
|
Spansion, Inc.
SPANSION LLC
|
| AT49BV802AT-70TU AT49BV802AT-70TJ |
FLASH, 8M, TOP BOOT, TSOP, IND TEMP, GRN(FLASH) 512K X 16 FLASH 3V PROM, 70 ns, PDSO48
|
Atmel, Corp.
ATMEL CORP
|
| AT49BV512-90TU |
512K, 3V FLASH, TSOP, IND TEMP, GREEN(FLASH) 64K X 8 FLASH 2.7V PROM, 90 ns, PDSO32
|
Atmel, Corp.
|
| HY29F080G-70 HY29F080G-12 HY29F080T-70 HY29F080R-9 |
x8 Flash EEPROM 1M X 8 FLASH 5V PROM, 90 ns, PDSO40
8 Megabit (1M x 8), 5 Volt-only, Flash Memory 8兆位米8），5伏只，闪
|
Hynix Semiconductor Inc.
Hynix Semiconductor, Inc.
|
| CAT28F010TRI-70T CAT28F010N-90T CAT28F010P-15 CAT2 |
128K X 8 FLASH 12V PROM, 70 ns, PDIP32 PLASTIC, DIP-32
1 Megabit CMOS Flash Memory(79.65 k) 1兆位的CMOS快闪记忆体（79.65十一
x8 Flash EEPROM x8闪存EEPROM
|
Ironwood Electronics
NXP Semiconductors N.V.
Microchip Technology, Inc.
ON SEMICONDUCTOR
|
